ZnO의 열처리방법에 따른 전기적인 특성의 변화와 결정성

오 데레사; Teresa Oh

Korean Journal of Materials Research, Vol.27, No.5, 242-247, May, 2017

DOI10.3740/MRSK.2017.27.5.242 Export Citation

ZnO의 열처리방법에 따른 전기적인 특성의 변화와 결정성

Analysis of Crystallinity and Electrical Characteristics of Oxide Semiconductor of ZnO in Accordance with Annealing Methods

오 데레사

청주대학교 반도체공학과

Teresa Oh

Department of Semiconductor Engineering, Cheongju University, Korea

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

Keywords:ZnO;XRD;PL spectra;capacitance

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[4] Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)

[5] Jeong DW, Kim JJ, Lee JO, J. Korean Phys. Soc., 59, 3133 (2011)

[6] Chen WT, Lo SY, Kao SC, Zan HW, Tsai CC, Lin JH, Fang CH, Lee CC, IEEE Electron. Dev. Lett., 32, 1552 (2011)

[7] Lee JS, Kwack YJ, Choi WS, J. Korean Phys. Soc., 59, 3305 (2011)

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[12] Lopes ME, Gomes HL, Medeiros MCR, Barquinha P, Pereira L, Fortunato E, Martins R, Ferreira I, Appl. Phys. Lett., 95, 063502 (2009)

[13] Oh T, Choi CK, J. Korean Phys. Soc., 56, 1150 (2010)

[14] Peng YY, Hsieh TE, Hsu CH, Nanotechnology, 17, 174 (2006)

[15] Oh T, Korean J. Mater. Res., 24(3), 135 (2014)

[16] Heo J, Kim HJ, Han J, Shon JW, Thin Solid Films, 515(12), 5035 (2007)

[17] Oh T, Korean J. Mater. Res., 25, 1149 (2015)

[18] Choi BJ, Korean J. Mater. Res., 25(9), 429 (2015)

[19] Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)