Peculiarities of heteroepitaxial growth of CdSb thin films on A(II)B(VI) and A(III)B(VI) single crystal substrates were studied by atomic-force and scanning electron microscopy. New thin film CdSb-Cd1-xMnxTe and CdSb-In-4(Ses)(1-x)Te-3x heterojunctions were obtained by high-frequency cathode sputtering of CdSb single crystal target. Laser treatment of CdSb films using millisecond YAG-laser with energy density of 0.1-4.5 j/cm(2) has been carried out in order to modify and improve their structure and phase state. Stoichiometry of composition and granular polycrystalline structure of CdSb films on Cd1-xMnxTe and In-4(Se-3)(1-x)Te-3x. substrates have been confirmed by SEM and AFM studies. A stepwise growth processes of grains were detected under laser treatment in CdSb films. Anisotropic shape of grains in CdSb films was found depending on crystallographic orientation of In4Se3 substrate surface. (C) 2016 Elsevier B.V. All rights reserved.