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Journal of Physical Chemistry, Vol.100, No.42, 16777-16778, 1996
Interchain Migration of Electrons and Holes in Polysilanes
The measurements of the ESR and optical absorption spectra of polysilane radical ions revealed that the hole in the radical cation is delocalized onto the side chains, whereas the excess electron in the radical anion is confined within the silicon main chain. This observation suggests that the side chains hinder the interchain hopping of the charge for the anion but not the cation. Therefore the hole is the primary charge carrier in polysilanes.
Keywords:RADIATION-INDUCED CONDUCTIVITY;ABSORPTION-SPECTROSCOPY;SPIN-RESONANCE;TRANSPORT;POLY(DI-N-HEXYLSILYLENE);OLIGOSILANE;POLYMERS;SILICON