Journal of Crystal Growth, Vol.468, 258-261, 2017
High-temperature growth and characterization of ( Er, Yb): YAl3(BO3)(4) single crystal layers
Er0.02Yb0.11Y0.87Al3(BO3)(4) epitaxial layers were grown from K2Mo3O10 based fluxed melts using LPE technique. HT-SGDS grown YAl3( BO3)(4) single crystals were used as substrates. Growth kinetics and micromorphology of (Er. Yb): YAl3(BO3)(4) thin films were investigated.