A new set-up of "Mossbauer Spectroscopic Microscope (MSM)" is applied to study not only the diffusion of Fe in a single-crystalline Si, but also a correlation between Fe impurities and the lattice defects in a multi-crystalline (mc-) Si. In addition to substitutional Fe-s(0) and interstitial Fe-i(0) components, the Mossbauer spectrum of mc-Si contains a new component assigned to "Fei-defect associations". All three components appear to distribute inhomogeneously, and to correlate with the defect distributions. These results are clearly different from that of the single crystalline Si wafer.