Strained Si/SiGe heterostructures were grown on vicinal Si(110) substrates by using gas-source MBE, and relationship between structural aspects and effective hole mobility was investigated. The surface inclination was found to be effective in obtaining smoother surface. By growing the film at different substrate temperatures, samples which were significantly different in surface morphology and crystalline defects were obtained. Under a certain condition, the strain in the SiGe layer was found to be relaxed mainly by microtwin formation. It was found that this strain relaxation pathway was favorable for pMOSFETs with [110] channel. As a result, the effective hole mobility as high as 350 cm(2)/Vs was achieved on conventional Si substrate.