The structural and optical properties of (In, Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In, Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, as well as p-i-n structure with embedded (In, Mn)As quantum dot layer was carried out. The results obtained can be of importance for the creation of novel light emitting devices.