Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy

Fuji R; Mitchell B; Koizumi A; Inaba T; Fujiwara Y

Journal of Crystal Growth, Vol.468, 862-865, 2017

DOI10.1016/j.jcrysgro.2017.01.015 Export Citation

Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy

Fuji R, Mitchell B, Koizumi A, Inaba T, Fujiwara Y

N-polar GaN doped with Eu was grown by organometallic vapor phase epitaxy. Investigation of the surface morphology and photoluminescence properties indicated that Eu doping into N-polar GaN is more difficult than it is for Ga-polar GaN. The origin of this difficulty was also explored.

Keywords:Metalorganic vapor phase epitaxy;N-polar GaN;Nitrides;Rare earth compounds