In this study, tin oxide (SnO2) nanowires were synthesized on cobalt coated silicon wafer at 850 degrees C for 1hour via carbo thermal reduction vapor method by using thermal chemical vapor deposition. The diameter and the length of SnO2 nanowires were approximately 120nm and 10m, respectively. The SnO2 nanowires had tetragonal structure with lattice constants of a = b = 4.743 angstrom and c = 3.186 angstrom. In the results of field emission characteristics, the turn-on field was approximately 15V/m, which was defined as the field to produce a 1.1 x 10(-7) A/cm(2). The field emission from the SnO2 nanowires successfully followed the Fowler-Nordheim behavior. The average value of SnO2 nanowires was calculated to be about 467, assuming the work function of the SnO2.