The goal of this study is to investigate the influence of the deposition temperature on the CuIn1-xGaxSe2 (CIGS-copper indium gallium diselenide) film characteristics deposited by picosecond laser ablation method using a Nd: YVO4 laser (8 ps, 0.2 W, 50 kHz, 532 nm; 5.7 mJ/cm(2); 36 x 10(7) pulses). The films were deposited starting from a CuIn0.7Ga0.3Se2 target, in vacuum at 3 x 10(-5) Torr for 2 h, at room temperature (RT) and 100/200/300/400 degrees C substrate temperature; as substrate, optical glass was used. Structure, film morphology, composition and optical properties were investigated by X ray diffraction, scanning electron microscopy (energy dispersive X ray spectroscopy), spectroscopic ellipsometry and optical spectrophotometry. CIGS crystalline films have the dominant peak corresponding to (112) direction more pronounced starting with 200 degrees C deposition temperature. The thickness gradually decreased with temperature increasing, being 1.44 mu m at RT and 0.72 mu m at 400 degrees C; atomic composition in the case of In, Ga, Se increased after annealing, while in the case of Cu it decreased comparing with RT; refractive indices exhibited a short decreasing tendency by increasing the deposition temperature, while the optical band gap values for CuIn0.7Ga0.3Se2 laser ablated thin films increased. (C) 2017 Elsevier B.V. All rights reserved.