Single phase of SnS thin film was fabricated from S/Sn/S/Sn/S multilayer prepared by using atmospheric pressure and vacuum thermal evaporation methods Glancing angle high vacuum thermal evaporation technique was employed to grow Sn nanorods which facilitated the sulphur diffusion in a faster manner to prepare SnS nanoparticles. The sulphur deposition temperature, sulphur deposition time and tin deposition time were successfully tailored in the synthesis process and stabilized alpha-phase SnS by probing through confocal micro-Raman spectrometer. X-ray diffraction confirms the formation of SnS crystal structure at sulphur deposition temperature 200 degrees C. The mechanism of formation of highly porous SnS phase with flower like morphology is explained from the morphological analysis of post deposition annealed film. The complete absence of any oxidation state as evident from Raman as well as EDAX analysis confirms that the proposed sulphurization method could be a suitable, simple and cheap technique for the successful sulphurization of metal films. Band gap calculation from Tauc plot showed a direct band gap value of 1.5 eV for films with single phase of SnS which can be used as a p-type absorber layer in thin film solar cells. Emission studies showed the energy transitions attributed to band edge transition and due to the presence of intrinsic defects. (C) 2017 Elsevier B.V. All rights reserved.