Systematic investigation on the optoelectronic and structural changes occurring in the p-nc-Si network due to the inclusion of oxygen into the initial crystalline-like matrix has been done. The incorporation of O into the Si network occurs via the Si-O-Si bond which is effectively responsible for the widening of optical band gap. B incorporation takes place via the B-Si bonds as well as the B-O bonds which increases at enhanced CO2 dilution to the plasma. The continuously increased intensity of (SiH2) n wagging and SiH2 bending mode in p-nc-SiOx films indicates poly-hydrogenation as inherent to the increasing oxygen alloying of the network. Two stage activation energies across around 340 K in the temperature dependent dark conductivity identify prominent two phase structure of the p-nc-SiOx material, the Si-ncs being embedded within amorphous p-SiOx matrix. The p-nc-SiOx film grown by typical 13.56 MHz PE-CVD at a low growth temperature similar to 170 degrees C and optimized with a convincingly good combination of the electrical conductivity (sigma D similar to 6.8 x 10(-2) S cm(-1)), optical band gap (E-g similar to 1.91 eV) and volume fraction (XC similar to 54%) of the Si crystallinity containing C-H <6 at% and C-O < 1 at%, emerges highly competent for effective utilization in the window layer of nc-Sip-i-n solar cells with superstrate configuration. (C) 2017 Elsevier B.V. All rights reserved.