Kesterite, Cu2ZnSnS4 (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu2ZnSnS4 (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 A degrees C are tetragonal, while at temperatures < 375 A degrees C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 Omega cm), carrier concentration (2.65 x 10(+15) vs 4.55 x 10(+17) cm(-3)) and mobility (87.1 vs 11.1 cm(2) V-1 s(-1)). The Hall coefficients were 2.36 x 10(3) versus 13.7 cm(3) C-1.