Bi0.5Na0.5TiO3-based incipient ferroelectrics with pseudocubic structure generally show weak ferro-/piezoelectricity but giant field-induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead-free incipient ferroelectric ((Bi-0.5(Na0.84K0.16)(0.5))(0.96)Sr-0.04)(Ti0.975Nb0.025)O-3 (BNT-2.5Nb) to form 0-3 type composites (BNT-2.5Nb:xZnO), we experimentally illustrate that the resistance and ferro-/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 C/cm(2) and 8 pC/N for x=0 to 9.0 C/cm(2) and 31 pC/N for x=0.3. At the same time, the total strain only decreases from 0.140% for x=0 to 0.108% for x=0.3, whereas the negative strain increases from -0.003% for x=0 to -0.010% for x=0.3. And the thermal stability of d(33) is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT-based incipient ferroelectrics, but also may stimulate further work on artificially structured high-performance ferroelectrics.