Epitaxial BaTiO3 (BTO) films were deposited on (La0.5Sr0.5)CoO3 buffered (001)-oriented YA1O(3), LaA1O(3), (La0.5Sr0.5)(Al0.5Ta0.5)O-3, and SrTiO3 single-crystal substrates using radio-frequency magnetron sputtering. XRD analyses identified that the actual in-plane misfit strains are an order of magnitude less than the unrelaxed lattice misfit (the relaxation of the film/substrate internal stresses). The dielectric properties, polarization and leakage current performances all exhibit slightly the substrate-dependent behavior, which can be mainly attributed to the difference of the film/electrode interface-state parameters. A modified Schottky model was employed to describe the leakage current behaviors. Large space-charge densities calculated with this theory achieved on the order of 10(19) cm(-3) for all BTO films, which will significantly contribute to shrinking and tilting of our P-V loops. One possible potential application for ferroelectric films with such characteristic is to provide high storage density of capacitive energy. (C) 2017 Elsevier Ltd. All rights reserved.