In this study, we demonstrate 12 x 12 mu m(2) high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 mu m-thick p-doped absorption regions. High quality dry etching combined with SiO2 passivation results in a surface resistivity value of 7.9 x 10(5) Omega cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 x 10 (4) A/cm(2) for the longer (red) and 1.3 x 10 (4) A/cm(2) for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50% cut-off wavelengths of 8.3 and 11.2 mu m for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37% and 29%, respectively. This results in specific detectivity values of 2.5 x 10(11) cm.Hz(1/2)/W and 1.3 x 10(11) cm.Hz(1/2)/W at 77 K. (C) 2017 Elsevier Ltd. All rights reserved.