We have grown K0.5Na0.5NbO3 (KNN) films on Pt/TiO2/SiO2/Si substrates by using pulsed laser deposition. Thin films with pure KNN crystal phase and homogenous morphology were successfully prepared by optimizing the deposition conditions, mainly the oxygen partial pressure and deposition temperature. For oxygen pressure as low as 8 Pa a tungsten-bronze phase is formed, while for higher values i.e. 16 and 32 Pa, the desired KNN perovskite structure is obtained. To prepare pure KNN thin films, a deposition temperature as low as 675 degrees C is required, however, increasing the temperature to 725 degrees C promotes better homogeneity and densification of the films. The piezoelectric and ferroelectric behavior, confirmed by piezoresponse force microscopy, revealed a local piezoelectric coefficient of d(33) = 37 pm/V and a coercive voltage of 3.5 V. Finally, we measured the frequency response of this material prepared as a sensor, using the photoacoustic method. This measurement shows that the resonant frequency of a KNN thin film of 230 nm thickness is centered at 3 MHz. (C) 2017 Elsevier B.V. All rights reserved.