소자 구조에 따른 형광 OLED의 Impedance 특성

공도훈; 주성후; Do-Hoon Kong; Sung-Hoo Ju

Korean Journal of Materials Research, Vol.28, No.1, 18-23, January, 2018

DOI10.3740/MRSK.2018.28.1.18 Export Citation

소자 구조에 따른 형광 OLED의 Impedance 특성

Impedance Characteristics of Fluorescent OLED with Device Structure

공도훈, 주성후^†

대진대학교 신소재공학과

Do-Hoon Kong, and Sung-Hoo Ju^†

Department of Advanced Materials Science & Engineering, Daejin University, Pocheon 11159, Republic of Korea

E-mail:

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / Alq3 / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / Alq3 / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / Alq3 / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and 160 Ω just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

Keywords:OLED;fluorescence;impedance;current-voltage-luminance;elapsed time

[References]

Zhang Q, Zhang X, Wei B, Optik, 126, 1595 (2015)
Nam E, Park H, Park K, Moon MR, Sohn S, Jung D, Yi J, Chae H, Kim H, Thin Solid Films, 517(14), 4131 (2009)
Zhang XW, Mo BJ, Liu LM, Wang HH, Chang DT, Xu JW, Wang H, Wei B, Curr. Appl. Phys., 14(11), 1460 (2014)
Chauhan G, Srivastava R, Tyagi P, Kumar A, Srivastava PC, Kamalasanan MN, Synth. Met., 160, 1422 (2010)
Park YH, Kim Y, Curr. Appl. Phys., 13(2), 336 (2013)
Ishihara S, Hase H, Okachi T, Naito H, Org. Electron., 12, 1364 (2011)
Evans DR, Kwak HS, Giesen DJ, Goldberg A, Halls MD, Oh-e M, Org. Electron., 29, 50 (2016)
Kim Y, Oh JS, Choi EH, Cho GS, Kang SO, Cho JW, J. Korean Vac. Soc., 11, 171 (2002)
Park CS, Kong DH, Kang JH, Yun SH, Ju SH, J. Korean Inst. Surf. Eng., 48, 115 (2015)
Lee JH, J. Korean Inst. Electr. Electron. Mater. Eng., 17, 1341 (2004)
Lee JY, Park JY, Min SH, Lee KW, Baek YG, Thin Solid Films, 515(20-21), 7726 (2007)
Chen H, Gao CH, Jiang ZQ, Zhang L, Cui LS, Ji SJ, Liao LS, Dyes Pigment., 107, 15 (2014)

[1] Zhang Q, Zhang X, Wei B, Optik, 126, 1595 (2015)

[2] Nam E, Park H, Park K, Moon MR, Sohn S, Jung D, Yi J, Chae H, Kim H, Thin Solid Films, 517(14), 4131 (2009)

[3] Zhang XW, Mo BJ, Liu LM, Wang HH, Chang DT, Xu JW, Wang H, Wei B, Curr. Appl. Phys., 14(11), 1460 (2014)

[4] Chauhan G, Srivastava R, Tyagi P, Kumar A, Srivastava PC, Kamalasanan MN, Synth. Met., 160, 1422 (2010)

[5] Park YH, Kim Y, Curr. Appl. Phys., 13(2), 336 (2013)

[6] Ishihara S, Hase H, Okachi T, Naito H, Org. Electron., 12, 1364 (2011)

[7] Evans DR, Kwak HS, Giesen DJ, Goldberg A, Halls MD, Oh-e M, Org. Electron., 29, 50 (2016)

[8] Kim Y, Oh JS, Choi EH, Cho GS, Kang SO, Cho JW, J. Korean Vac. Soc., 11, 171 (2002)

[9] Park CS, Kong DH, Kang JH, Yun SH, Ju SH, J. Korean Inst. Surf. Eng., 48, 115 (2015)

[10] Lee JH, J. Korean Inst. Electr. Electron. Mater. Eng., 17, 1341 (2004)

[11] Lee JY, Park JY, Min SH, Lee KW, Baek YG, Thin Solid Films, 515(20-21), 7726 (2007)

[12] Chen H, Gao CH, Jiang ZQ, Zhang L, Cui LS, Ji SJ, Liao LS, Dyes Pigment., 107, 15 (2014)