The growth of undoped GaSb epilayers on GaAs (0 0 1) substrates with 2 degrees offcut towards < 1 1 0 >, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2 mu m-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90 degrees pure-edge dislocations along the [1 1 0] direction with a periodicity of 5.6 nm. (C) 2017 Elsevier B.V. All rights reserved.