Single crystal samples beta-Zn4Sb3 have been prepared by using Bi-Sn mixed-flux method. The obtained crystals exhibit p-type conduction behavior with carrier concentration varying from 4.40 x 10(19) to 18.12 x 10(19) cm(-3) as carrier mobility changes from 25.8 to 61.5 cm(2) V-1 s(-1) at room temperature. Electrical transport properties of the samples were optimized by Bi-Sn co-doped, which brought by BiSn mixed-flux. And the maximal power factor of 1.45 x 10(-3) W m(-1) K-2 is achieved at 510 K for the sample with Bi flux content x = 0.5. Consequently, the oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which the single crystalline beta-Zn4Sb3 still possess an excellent oxidation resistance and thermal stability after the heat treatment process. (C) 2017 Elsevier B.V. All rights reserved.