Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

Katagiri A; Ogawa S; Uehara M; Krishnan PSSR; Kurokawa M; Matsushima M; Shimizu T; Akiyama K; Funakubo H

Journal of Materials Science, Vol.53, No.7, 5151-5158, 2018

DOI10.1007/s10853-017-1902-z Export Citation

Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

Katagiri A, Ogawa S, Uehara M, Krishnan PSSR, Kurokawa M, Matsushima M, Shimizu T, Akiyama K, Funakubo H

Epitaxial Mg2Si films with (111) orientation were successfully grown at 300 degrees C on (001) Al2O3 insulating substrates by RF magnetron sputtering method. The optimal conditions for the epitaxial growth were identified as a low deposition rate and high deposition pressure above 60 mTorr. X-ray diffraction and transmission electron microscopy analysis confirmed the growth of (111)-oriented epitaxial Mg2Si films with the following relationship: (111) Mg2Si//(001)Al2O3. The conduction type of the epitaxial films was p-type up to 450 degrees C, which is same conduction type of the (110)-one-axis oriented ones. The electrical conductivity of the epitaxial films was lower than that of (110)-one-axis oriented ones.