The creep behaviour at 1050 A degrees C of < 001 > oriented MC2 single crystals is analysed by means of SEM and TEM observations. The gamma-gamma' rafting process occurs rapidly and appears to be correlated with the establishment of a pseudo-stationary creep stage. The regular and stable networks are seen in the (001) interfaces. A detailed analysis of dislocation networks in these (001) interfaces shows that they are constituted by an association of hexagonal and square cells of a/2 < 110 > dislocations. The square part is unstable and gives rise to the systematic creation of a < 001 > dislocations included in the misfit dislocation network.