TiO2 is extensively used as electron-transporting material on perovskite solar cells (PSCs). However, traditional TiO2 processing method needs high annealing temperature (> 450 degrees C) and pure TiO2 suffers from low electrical mobility and poor conductivity. In this study, a general one-pot solution-processed method is devised to grow uniform crystallized metal-doped TiO2 thin film as large as 15 x 15 cm(2). The doping process can be controlled effectively via a series of doping precursors from niobium (V), tin (IV), tantalum (V) to tungsten (VI) chloride. As far as we know, this is so far the lowest processing temperature for metal-doped TiO2 compact layers, as low as 70 degrees C. The overall performance of PSCs employing the metal-doped TiO2 layers is significantly improved in term of hysteresis effect, short circuit current, open-circuit voltage, fill factor, power conversion efficiency, and device stability. With the insertion of metal ions into TiO2 lattice, the corresponding CH3NH3PbI3 PSC leads to a similar to 25% improved PCE of over 16% under irradiance of 100 mW cm(-2) AM1.5G sunlight, compared with control device. The results indicate that this mild solution-processed metal-doped TiO2 is an effective industry-scale way for fabricating hysteresis-less and high-performance PSCs.