화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.101, No.3, 1236-1244, 2018
High temperature-insensitive ferro-/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O-3-PbZrO3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 relaxor single crystals
For rhombohedral (R) Pb(In1/2Nb1/2)O-3-PbZrO3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PIN-PZ-PMN-PT) relaxor single crystal, high temperature-insensitive behaviors under different external stimuli were observed (remnant polarization P-r from 30 degrees C to 180 degrees C and piezoelectric strain d(33)* from 30 degrees C to 116 degrees C). When electric field E 50 kV/cm in the case of an activation field E-a = 40-50 kV/cm was applied, it was found that the domain switching was accompanied by a phase transition. The high relaxor nature of the R phase PIN-PZ-PMN-PT was speculated to account for the large E-a and high piezoelectric response. The short-range correlation lengths extracted from the out-of-plane (OP) and in-plane (IP) nanodomain images, were 64 nm and 89 nm, respectively, which proved the high relaxor nature due to In3+ and Zr4+ ions entering the B-site in the ABO(3)-lattice and enhancing the disorder of B-site cations in the R phase PIN-PZ-PMN-PT. The switching process of R nanodomain variants under the step-increased tip DC voltage was visually revealed. Moreover, the time-dependent domain evolution confirmed the high relaxor nature of the R phase PIN-PZ-PMN-PT single crystal.