Polarized detection has been brought into operation for optics applications in the visible band. Meanwhile, an advanced requirement in short-wave near-infrared (SW-NIR) (700-1100 nm) is proposed. Typical IV-VI chalcogenides-2D GeSe with anisotropic layered orthorhombic structure and narrow 1.1-1.2 eV band gap-potentially meets the demand. Here we report the unusual angle dependences of Raman spectra on high-quality GeSe crystals. The polarization-resolved absorption spectra (400-950 nm) and polarization-sensitive photodetectors (532, 638, and 808 nm) both exhibited well reproducible cycles, distinct anisotropic features, and typical absorption ratios alpha(y)/alpha(x) approximate to 1.09 at 532 nm, 1.26 at 638 nm, and 3.02 at 808 nm (the dichroic ratio I-py/I-px approximate to 1.09 at 532 nm, 1.44 at 638 nm, 2.16 at 808 nm). Obviously, the polarized measurement for GeSe showed superior anisotropic response at around 808 nm within the SW-NIR band. Besides, the two testing methods have demonstrated the superior reliability for each other. For the layer dependence of linear dichroism, the GeSe samples with different thicknesses measured under both 638 and 808 nm lasers identify that the best results can be achieved at a moderate thickness about 8-16 nm. Overall, few-layer GeSe has capacity with the integrated SW-NIR optical applications for polarization detection.