In this work we report a broad scenario for the patterning of semiconducting polymers by laser-induced periodic surface structures (LIPSS). Based on the LIPSS formation in the semicrystalline poly(3-P3HT), we have extended the LIPSS fabrication to an essentially amorphous semiconducting polymer like poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT). This polymer shows a good quality and well-ordered P3HT, but also at 266 run providing gratings with smaller pitch. In addition, we have proven the feasibility of fabricating LIPSS in the P3HT/PCDTBT (1:1) blend, which can be considered as a model bulk-P3HT and PCDTBT domains present well-defined LIPSS as well as a synergy for both components in the blend when irradiating at wavelengths of 532 and 266 nm. Both, P3HT and PCDTBT in the blend require lower fluence and less pulses in order to optimize LIPSS morphology than in the case of irradiating the homopolymers separately. Near edge X-ray absorption fine structure and Raman spectroscopy reveal a good chemical stability of both components in the blend thin films during LIPSS formation. In addition, scanning transmission X-ray spectro-microscopy shows that the mechanisms of LIPSS formation do not induce a further phase segregation neither a mixture of the components. Conducting atomic force microscopy reveals a heterogeneous electrical conductivity for the irradiated homopolymer and for the blend thin films, showing higher electrical conduction in the trenches than in the ridge regions of the LIPSS.