Low-voltage-drive InGaZnO (IGZO) thin-film transistor (TFT) with SiO2/HfO2/SiO2 (SHS) multilayer gate insulator is deposited by radio frequency sputtering at room temperature. The fabricated device performed a threshold voltage of 1.4V, a field effect mobility of 8.6 cm(2)/V-S, an I-on/I-off ratio of 2.9 x 10(5), and a sub-threshold voltage swing of 0.67 V/dec. The drain current was 260 mu A with both gate and drain voltage of 10V. SHS multilayer has a high capacitance to increase the high mobility and decrease the drive voltage for TFT.