The paper presents a theoretical study of the p(+)B(p)nN(+) design based on HgCdTe(1 0 0) layers, which significantly improves the performance of detectors optimized for the mid-wave infrared spectral range. p(+) B(p)nN(+) design combines the concept of a high impedance photoconductor with double layer heterojunction device. Zero valence band offset approximation throughout the p(+) Bpn heterostructure allows flow of only minority holes generated in the absorber, what in a combination with n-N+ exclusion junction provides the Auger suppression. Modeling shows that by applying a low doping active layer, it is possible to achieve an order of magnitude lower dark current densities than those determined by "Rule 07". A key to its success is a reduction of Shockley-Read-Hall centers associated with native defects, residual impurities and misfit dislocations. Reduction of metal site vacancies below 1012 cm(-3) and dislocation density to 105 cm(-2) allow to achieve a background limited performance at 250 K. If the background radiation can be reduced, operation with a three-or four-stage thermo-electric-cooler may be possible. (C) 2017 Elsevier Ltd. All rights reserved.