Epitaxial thin ZnO films grown by Atomic Layer Deposition were implanted with 150 keV Pr ions to a fluence of 1 x 10(15) at/cm(2). Implanted samples were subjected to two different kinds of annealing: rapid thermal annealing (RTA) and millisecond-range flash lamp annealing (FLA). Structural properties of implanted and annealed ZnO and the optical response were evaluated by the Channeling Rutherford Backscattering Spectrometry (RBS/c), High-resolution X-ray diffraction and Photoluminescence Spectroscopy (PL), respectively. The results shown, that both annealing techniques lead to recrystallization of the ZnO lattice, that was damaged during the ion implantation. Upon RTA performed at 800 degrees C a return of Zn atoms from interstitial to their regular site positions is accompanied by rejection of primarily substitutional Pr atoms to the interstitial sites. Consequently, it leads to the out-diffusion and precipitation of Pr atoms on the surface. In contrast to RTA, the diffusion of implanted Pr during a millisecond range FLA treatment is completely suppressed. Despite differences in location of Pr inside the ZnO matrix after FLA and RTA, both annealing techniques lead to the optical activation of Pr3+. Interestingly, our RBS/c study for as implanted layers also revealed the anomalous damage peak, called intermediate peak (IP) located between the expected surface and the bulk damage peak. The PL spectra clearly suggest, that the defect which forms the IP, can be assigned to Zn interstitials. The long-time annealing at 800 degrees C in oxygen atmosphere causes the complete removal of the IP. (c) 2017 Elsevier B.V. All rights reserved.