The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO): polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythio phene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 x 10(3) and 5.16 x 10(2), respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 x 10(4) s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between 0.7 and 0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 x 10(2), respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively. (C) 2018 Elsevier B.V. All rights reserved.