Applied Surface Science, Vol.442, 308-312, 2018
10.3%-efficient submicron-thick Cu( In,Ga)Se-2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets
We reported a new method to fabricate submicron- thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron- thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%. (C) 2018 Elsevier B.V. All rights reserved.