Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (P-O2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at P-O2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)parallel to MgO (110) with Cu2O (001)parallel to MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Omega cm and highest Hall mobility of 23.75 cm(2) v(-1) s(-1). (C) 2017 Elsevier B.V. All rights reserved.