The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]-oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800nm light at a fluence of 130 mu W cm(-2), an on-to-off current ratio of 4.44 x 10(2) was produced at a 1V bias potential, with a dark current density of 8.49 x 10(-9) Acm(-2). This excellent light-associated cycle of photocurrent production and non-production warrants further investigation for a high-resolution photodetector in image sensing applications.