We have investigated the effect of nitrogen (N-2) as a carrier gas on the growth of vertical graphene nanosheets (VGN) by plasma-enhanced chemical vapor deposition. It is demonstrated that addition of nitrogen gas with a hydrocarbon precursor can enhance the nucleation and growth rate of graphitic base layer as well as vertical sheets. Additionally, nitrogen gas can simultaneously act as an etchant as well as a dopant. Variation in the density of vertical sheets is found, and it increased initially thereafter decreased at higher nitrogen concentration. Furthermore, VGN exhibit sheet resistance from 0.89 to 1.89 K Omega/square and mobility from 8.05 to 20.14 cm(2)/V-s, depending on the morphology and type of carrier concentration. These results reveal that the surface morphology and electronic properties of VGN can be tuned by incorporation of nitrogen gas during the growth.