In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of I-on = 2.55x10-7 A/mu m at V-ds=V-on = V-gs-V-off=-0.5 V for an I-off = 1 nA/mu m and an average SS of 55 m(V)/d(ec) over two orders of magnitude of I-d. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency g(m)/I-d beats the MOSFET performance at low currents.