The present work reports the effect of 200 keV carbon ion implantation on the c-axis sapphire with different fluences: 4 x 10(15), 8 x 10(15) and 1.6 x 10(16) ions/cm(2). The electronic and nuclear energy losses and projected range were calculated using the Stopping and Range of Ions in Matter software. The Raman studies of as-implanted and post-implantation annealed samples showed the signatures of graphitic and diamond-like carbon materials. The structural studies were carried out using X-ray diffraction which showed the presence of carbon in different phases. The optical properties of the samples were studied using the room temperature Photoluminescence which confirms the formation of F-type color centers due to microstructural changes. The morphological studies by Atomic Force Microscopy revealed the surface modification in the samples. The Hall measurements were carried out on carbon ion implanted sapphire substrate and analyzed. The Hall measurements confirmed that the insulating c-sapphire becomes conducting after carbon ion implantation and subsequent annealing.