Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device

Jihee Jung; Dahye Kwon; Hunsang Jung; Kyungmin Lee; Tae-Sik Yoon; Chi Jung Kang; Hyun Ho Lee

Journal of Industrial and Engineering Chemistry, Vol.64, 85-89, August, 2018

DOI10.1016/j.jiec.2018.02.026 Export Citation

Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device

Jihee Jung, Dahye Kwon, Hunsang Jung, Kyungmin Lee, Tae-Sik Yoon¹, Chi Jung Kang², and Hyun Ho Lee^†

Department of Chemical Engineering, Myongji University, Republic of Korea
¹Department of Material Science & Engineering, Myongji University, Republic of Korea
²Department of Physics, Myongji University, Gyeonggi, 17058, Republic of Korea

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Multistate resistive switching device was demonstrated with organic/inorganic nanocomposite layer of polyvinylphenol (PVP) embedded with zinc oxide nanoparticles (ZnO NPs). Both cap (ITO/ZnO NPs + PVP/Al) and crossbar (Pt/ZnO NPs + PVP/Al) device formats were examined, respectively. Extending range of voltage sweep could show adaptive memory effect, which could roughly emulate analog resistive switching device. In addition, potentiation and depression behaviors were also examined with 50 time consecutive pulsed bias (+2.0 V and -2.0 V respectively) having 10 ms width measured at read voltage of -0.2 V. A new possibility of analog resistive switching can be further pursued with the ZnO NPs + PVP nanocomposite.

Keywords:ZnO nanoparticle;Polyvinylphenol;Multistate memory;Potentiation;Depression

[References]

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Song S, Cho B, Kim TW, Ji Y, Jo M, Wang G, Choe M, Kahng YH, Hwang H, Lee T, Adv. Mater., 22(44), 5048 (2010)
Lee T, Chen Y, MRS Bull., 37, 144 (2012)
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Verbakel F, Meskers SCJ, Janssen RA, Appl. Phys. Lett., 89, 102103 (2006)
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Son DI, Park DH, Choi WK, Cho SH, Kim WT, Kim TW, Nanotechnology, 20, 195203 (2009)
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Li CL, Han C, Zhang YB, Zang ZG, Wang M, Tang XS, Du JH, Sol. Energy Mater. Sol. Cells, 172, 341 (2017)
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Zang Z, Zeng X, Du J, Wang M, Tang X, Opt. Lett., 41, 3463 (2016)
Kang DH, Choi WY, Woo H, Jang S, Park HY, Shim J, Choi JW, Kim S, Jeon S, Lee S, Park JH, ACS Appl. Mater. Interfaces, 20, 27073 (2017)
Seo K, Kim I, Jung S, Ko M, Park S, Park J, Shin J, Biju KP, Hong J, Lee K, Lee B, Hwang H, Nanotechnology, 22, 254023 (2011)
Kim HJ, Baek YJ, Choi YJ, Kang CJ, Lee HH, Kim HM, Kim KB, Yoon TS, RSC Adv., 3, 20978 (2013)
Kuzum D, Yu S, Wong HSP, Nanotechnology, 24, 382001 (2013)
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[3] Lee T, Chen Y, MRS Bull., 37, 144 (2012)

[4] Kim M, Jung H, Kim YH, Kang CJ, Yoon TS, Lee HH, Microelectron. Eng., 136, 26 (2015)

[5] Verbakel F, Meskers SCJ, Janssen RA, Appl. Phys. Lett., 89, 102103 (2006)

[6] Son DI, You CH, Kim WT, Jung JH, Kim TW, Appl. Phys. Lett., 94, 132103 (2009)

[7] Son DI, Park DH, Choi WK, Cho SH, Kim WT, Kim TW, Nanotechnology, 20, 195203 (2009)

[8] Lee WK, Wong HY, Aw KC, Microelectron. Eng., 88, 2837 (2011)

[9] Shi Q, Xu J, Wu Y, Wang Y, Wang X, Hong Y, Jiang L, Li L, Phys. Lett. A, 378, 3544 (2014)

[10] Kim M, Lee H, Oh S, Kim Y, Oh MK, Yoon YJ, Yoon YS, Lee HH, Biosens. Bioelectron., 56, 33 (2014)

[11] Li CL, Han C, Zhang YB, Zang ZG, Wang M, Tang XS, Du JH, Sol. Energy Mater. Sol. Cells, 172, 341 (2017)

[12] Li C, Zang Z, Han C, Hu Z, Tang X, Du J, Leng Y, Sun K, Nano Energy, 40, 195 (2017)

[13] Zang Z, Zeng X, Du J, Wang M, Tang X, Opt. Lett., 41, 3463 (2016)

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[15] Seo K, Kim I, Jung S, Ko M, Park S, Park J, Shin J, Biju KP, Hong J, Lee K, Lee B, Hwang H, Nanotechnology, 22, 254023 (2011)

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[17] Kuzum D, Yu S, Wong HSP, Nanotechnology, 24, 382001 (2013)

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[19] Ma Z, Wu C, Lee DU, Li F, Kim TW, Org. Electron., 28, 20 (2016)

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