The fine-tuning of graphene charge carrier concentrations is an essential factor to approach the integration of highly efficient electronic and optoelectronic devices. Here, we demonstrate the deep ultraviolet light driven doping tunability of graphene-based field effect transistor in presence of oxygen and argon atmosphere. The doping effect and its reversibility are confirmed from the Raman spectroscopy. These results are further corroborated by electrical transport measurements. Our findings provide an efficient, stable and defects free doping methodology to tailor the electrical properties of graphene for its potential application in desired technology. (C) 2018 Published by Elsevier B.V.