In order to enhance the visible light-driven photocatalytic H-2 production activity of CdZnS, an ethylenediamine-assisted hydrothermal pathway was used to synthesize CdxZn(1-x)S(en) with different Cd/Zn molar ratios. It was found out that the prepared Cd0.5Zn0.5S(en) possessed the highest photocatalytic H-2 production rate of 13539.0 mu mol h(-1) g(-1) that was higher than that of CdZnS. The key to this achievement could be ascribed to the stacking faults formation, the optimum band gap with conduction band position and small crystallite size. Based on this, Cd0.5Zn0.5S(en) was modified by NiS for further improving the activity. The obtained Cd0.5Zn0.5S(en) NiS with NiS loading content of 0.25 wt% exhibited much higher photocatalytic H-2 production rate, reaching up to 38187.7 mu mol h(-1) g(-1) that were among the highest efficiencies for semiconductor photocatalysts ever reported. It was confirmed that the nanosized NiS anchored on Cd0.5Zn0.5S(en) interface, acting as electron trapping sites, attributed to the spatial suppressions of electron-hole recombination. Meanwhile, the NiS loaded on the surface optimized the photogenerated electron transfer pathway between the semiconductor materials that gives rise to significantly enhanced photo catalytic activity. This study would put forward a facile method for developing high photocatalytic activity and low-cost catalytic material for H-2 production, which provide a new thought to address the global energy crisis and the environmental contamination. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.