In this study, we have proposed a flexible, rewritable and nonvolatile memory device based on an advanced 2D nanocomposite of hexagonal boron nitride (hBN) flakes and molybdenum disulfide quantum dots (MoS2 QDs). Complete device fabrication was carried out by using extremely simple and highly controllable all printed technology. The electrical characteristics exhibited by the as developed memory devices included the switching ratio, electrical endurance and retention time of similar to 10(3), 10(3) and 10(4) respectively. The device turned ON and OFF at the SET and RESET threshold voltages of + 1.4 V and -1 V respectively. The obtained results of electrical and thermal characterizations exhibited that the switching ratio decreases via either increasing temperature (300 K-380 K) or device size (42 mu m-100 mu m) hence verifying the formation of conductive filament through the functional layer. Moreover, no major degradation in the switching characteristics was observed even after 1500 bending cycles.