High-quality AIGaN/InGaN heterostructures are grown and the effects of InGaN channel thickness on the structure and transport properties are investigated. With the increase of InGaN channel thickness from 7 nm to 28 nm, the two-dimensional electron gas density decreases continuously, while the mobility shows a trend of increasing at first, and then decreasing. The optimum thickness of 21 nm is obtained for the In0.05Ga0.95N channel, achieving a high electron mobility of 1712 cm(2)/V, which indicates the huge potential for InGaN channel heterostructures in high-frequency and high-power applications. The variation in transport properties is studied by analyzing the structure formation, material quality, and interface characteristic in detail. The results are not only beneficial for the further study of the InGaN channel heterostructures, but also instructive for the other inserted channel system.