An apparent kinetic model for the chemical vapor deposition of SiO2 from tetraethyl orthosilicate (TEOS) and O-2 was developed in a poorly investigated range of operating conditions, that is, at atmospheric pressure and between 350 and 500 degrees C, based on literature survey and experimental results obtained in a hot wall tubular reactor. The kinetic model was implemented into the computational fluid dynamics code FLUENT and validated both in shape and value by comparison with experimental deposition rate profiles. It reveals that for the conditions tested, a possible mechanism of SiO2 deposition involves two intermediate species formed from TEOS homogeneous decomposition, the first one being active from 300 degrees C and the second one contributing to deposition for temperatures higher than 370 degrees C. The calculated local profiles of gas flow, gas temperature, species mass fraction, and silica deposition rate indicate that the first intermediate species leads to marked film thickness gradients, the second one being more stable as producing uniform thicknesses. (C) 2018 American Institute of Chemical Engineers