Single crystals of the new suboxides Ti7Ga2O6 and Ti3GaO were prepared using a Bi flux. Ti7Ga2O6 has a novel monoclinic crystal structure (a = 17.3111(8) angstrom, b = 2.97660(10) angstrom, c = 7.2563(3) angstrom, beta = 105.836(2), space group C2/m), in which three 0 sites and one Ga site are separately coordinated by Ti atoms. Ti3GaO crystallizes in an orthorhombic cell (a = 3.0952(2) angstrom, b = 10.6440(7) angstrom, c = 8.3206(5) A, space group Cmcm) with a filled-Re3B type (anti-CaIr03 type or antipostperovskite type) structure. The electrical resistivities of a single crystal of Ti3GaO as measured in the c-axis direction were 1.6 X 10(-6) nm at 300 K and 0.15 X 10-6 Elm at 10 K. Single crystals of Ti5Ga3O (x = 1) with a filled-Mn5Si3 type structure (hexagonal, a = 7.5882(2) angstrom, c = 5.30170(10) A, space group P63/mcm) were also obtained.