RETRACTION: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy (Retraction of Vol 366, Pg 35, 2013)

Zhang YT; Dong X; Li GX; Li WC; Zhang BL; Du GT

Journal of Crystal Growth, Vol.503, 65-65, 2018

DOI10.1016/j.jcrysgro.2018.09.044 Export Citation

RETRACTION: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy (Retraction of Vol 366, Pg 35, 2013)

Zhang YT, Dong X, Li GX, Li WC, Zhang BL, Du GT