Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200 degrees C, using di-isopropylaminosilane as a silicon source and oxygen (O-2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of similar to 1.7 angstrom at a constant O-2 plasma time of 1.0 s while the GPC of the PE-ALD SiO2 film decreased with the O-2 plasma time at a low temperature of 50 degrees C. In our experiment, the highest GPC of similar to 2.0 angstrom was achieved when the O-2 plasma time was 0.3 s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O-2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O-2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50 degrees C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.