Surface electronic properties of Bi2Se3 and Bi2Se3 topological insulators are known to evolve with varying surface termination. In this work, the (111) surface of Bi2Se3 has been studied with a comprehensive combination of experimental and computational (density functional theory) methods. It has been demonstrated that with proper preparation conditions the system can be forced into a new stable surface termination - a sub-monolayer of bismuth acquired through selective Se desorption - which has not been explored yet.