Ion-exchanged glasses are widely used in optoelectronic devices due to its high strength and optical waveguide effects. The MgF2 films deposited on the ion-exchanged glasses and the ion-exchanged glasses bombarded by argon ions (100 eV) at 220 degrees C were investigated in the present work. The microstructure of MgF2 films and the structural and physico-chemical properties of the ion-exchanged glasses before and after deposition and bombardment were analyzed by grazing incident X-ray diffraction (GIXRD), field emission scanning electron microscopy (FE-SEM), electron probe micro analysis (EPMA), micro-Raman spectroscopy and surface stress meter. It is shown that MgF2 films exhibit a polycrystalline and microcolumnar structure. The peak of potassium ions concentration distribution in the ion-exchanged glasses, accompanied by outward diffusion of potassium ions, decreases and moves from glass surface to the inner part to different degrees during deposition and bombardment. The potassium ions concentration in the region near the surface of argon ion-bombarded glasses is almost the same as the MgF2-coated glasses. Furthermore, the position and intensity of Raman bands in the subsurface region of the ion-exchanged glasses show obvious changes before and after deposition and bombardment. The values of compressive stress and depth of layer in the MgF2-coated ion-exchanged glasses and the argon ion-bombarded ion-exchanged glasses are far away lower than that of its values obtained in the ion-exchanged glasses. Overall results have shown that variations of chemical composition, Raman bands and surface compressive stress in the exchanged region indicate subsurface modification of the ion-exchanged glasses induced by deposition and bombardment, which provide useful information for the use of the ion-exchanged glasses in further.