A correlation study between the microstructural, electrical, optical, and morphological properties of the highly transparent and conducive Al-doped ZnO (AZO) films of varying thickness deposited by 3D confined DC magnetron sputtering is reported. Incorporating a high-density plasma environment as indicated by plasma diagnostic it was possible to fabricate AZO films of resistivity as low as similar to 5.2 x 10(-4) Omega cm and the maximum transmittance similar to 89% with well crystalline structured and smooth morphology at low-temperature. Correlation among the film properties reveals the possibility of filling the Zn atom in the Zn vacancy could be responsible for preparing AZO thin film with improved microstructure and high enrichment of carrier mobility and concentration.