AgMgAl films with a thickness of 6-12 nm were deposited on glass substrates using a co-sputtering process. AZO layers were then deposited on the AMA films to form bi-layer structures. The films were processed by traditional furnace annealing at temperatures of 100-200 degrees C and laser annealing with a laser power of 25-800 mW and repetition rates ranging from 100 to 400 kHz. For the non-annealed samples, the sheet resistance reduced and the transmittance increased with the addition of the AZO film to the AMA layer. For the optimal AMA thickness of 12 nm, the sheet resistance was equal to 85 Omega/rectangle , while the transmittance was equal to 74%. According to the DSC results, the crystallization temperature of the AMA film was around 100-150 degrees C. Following furnace annealing, the optoelectrical properties of the bi-layer structure improved due to the crystallization of the AMA film. Furthermore, for the laser-annealed film processed using a pulse energy of 0.5 mu J and a repetition rate of 400 kHz, the sheet resistance was reduced to 45 Omega/rectangle, while the transmittance was improved to 87%.