Morphological aspects of the evolution of a gas- solid interface during typical CVD processes are presented, as well as a continuum model of CVD growth. A linear stability analysis used determines the effect of reactor conditions opt the stability of planar growth. The main focus, however, is numerical solution of governing equations under a wide variety of conditions and with different initial interface shapes as starting point. Simplified solutions under specific deposition conditions and the numerical procedure for solving the complete system of equations are presented. The focuses am on the use of a parametrization that eliminates numerical problems encountered with steep interface gradients and the automatic generation of an adaptive mesh for the domain above the interface. Several examples illustrate the numerical solution procedure. To our knowledge, this is the first attempt to simulate interface evolution during CVD for long deposition times from various initial interface shapes. The simulation revealed several morphological phenomena observed experimentally in previous studies, including the formation of occlusions that contributes to film porosity and was clearly shown by the numerical results. Film uniformity strongly depends on the controlling mechanism of deposition. Severe nonuniformities develop under diffusional limitations, while deposition is very uniform under conditions of kinetics control. Film uniformity could be improved by choosing conditions for which a Damkohler number of deposition Da, would have the lowest value.